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 Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2127
General Description
The AP2127 Series are positive voltage regulator ICs fabricated by CMOS process. The AP2127 Series have features of low dropout voltage, low noise, high output voltage accuracy, and low current consumption which make them ideal for use in various battery-powered devices. AP2127 has 1.0V, 1.2V, 1.5V, 1.8V, 2.5V, 2.8V, 3.0V, 3.3V, 4.2V, 4.75V, 5.2V fixed voltage versions and 0.8V to 5.5V adjustable voltage versions. AP2127 series are available in SOT-23-5 Package.
Features
* * * * * * * * * * * * * Wide Operating Voltage: 2.5V to 6V High Output Voltage Accuracy: 2% High Ripple Rejection: 68dB@ f=1kHz, 54dB@ f=10kHz Low Standby Current: 0.1A Low Dropout Voltage: 170mV@300mA for VOUT=3.3V, 140mV@300mA for VOUT=5.2V Low Quiescent Current: 60A Typical Low Output Noise: 60Vrms@VOUT=0.8V Short Current Limit: 50mA Over Temperature Protection Compatible with Low ESR Ceramic Capacitor: 1F for CIN and COUT Excellent Line/Load Regulation Soft Start Time: 50s Auto Discharge Resistance: RDS(ON)=60
Applications
* * * Datacom Notebook Computers Mother Board
SOT-23-5
Figure 1. Package Type of AP2127
Oct. 2009 Rev. 1.3 1
BCD Semiconductor Manufacturing Limited
Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2127
Pin Configuration
K Package (SOT-23-5)
VIN GND Shutdown
1 2 3
5
VOUT
4
NC/ADJ
Figure 2. Pin Configuration of AP2127 (Top View)
Functional Block Diagram
SHUTDOWN Shutdown and Logic Control
VIN
VREF MOS Driver
Current Limint And Thermal Protection
VOUT
GND
Figure 3. Functional Block Diagram of AP2127 for Fixed Version
Oct. 2009 Rev. 1.3 2
BCD Semiconductor Manufacturing Limited
Data Sheet Preliminary Datasheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2127
Functional Block Diagram (Continued)
SHUTDOWN
Shutdown and Logic Control
VIN
VREF MOS Driver
Current Limint And Thermal Protection
VOUT
ADJ
GND
Figure 4. Functional Block Diagram of AP2127 for Adjustable Version
Oct. 2009 Rev. 1. 3 3
BCD Semiconductor Manufacturing Limited
Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2127
Ordering Information
AP2127 Circuit Type G1: Green TR: Tape and Reel Package K: SOT-23-5 ADJ: ADJ Output 1.0: Fixed Output 1.0V 1.2: Fixed Output 1.2V 1.5: Fixed Output 1.5V 1.8: Fixed Output 1.8V 2.5: Fixed Output 2.5V 2.8: Fixed Output 2.8V 3.0: Fixed Output 3.0V 3.3: Fixed Output 3.3V 4.2: Fixed Output 4.2V 4.75: Fixed Output 4.75V 5.2: Fixed Output 5.2V
Package
Temperature Range
Part Number AP2127K-ADJTRG1 AP2127K-1.0TRG1 AP2127K-1.2TRG1 AP2127K-1.5TRG1 AP2127K-1.8TRG1 GEH GEG GE1 GEP GEQ GER GES GHF GET GEU GEZ GEW
Marking ID
Packing Type Tape & Reel Tape & Reel Tape & Reel Tape & Reel Tape & Reel Tape & Reel Tape & Reel Tape & Reel Tape & Reel Tape & Reel Tape & Reel Tape & Reel
SOT-23-5
-40 to 85oC
AP2127K-2.5TRG1 AP2127K-2.8TRG1 AP2127K-3.0TRG1 AP2127K-3.3TRG1 AP2127K-4.2TRG1 AP2127K-4.75TRG1 AP2127K-5.2TRG1
BCD Semiconductor's products, as designated with "G1" suffix in the part number, are RoHS compliant and Green.
Oct. 2009 Rev. 1.3 4
BCD Semiconductor Manufacturing Limited
Data Sheet Preliminary Datasheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2127
Absolute Maximum Ratings (Note 1)
Parameter Input Voltage Shutdown Input Voltage Output Current Junction Temperature Storage Temperature Range Lead Temperature (Soldering, 10sec) Thermal Resistance ESD (Human Body Model) ESD (Machine Model) Symbol VIN VCE IOUT TA TSTG TLEAD JA ESD ESD Value 6.5 -0.3 to VIN+0.3 450 150 -65 to 150 260 250 6000 250 Unit V V mA
oC oC o
C
oC/W
V V
Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods may affect device reliability.
Recommended Operating Conditions
Parameter Input Voltage Operating Junction Temperature Range Symbol VIN TA Min 2.5 -40 Max 6 85 Unit V
oC
Oct. 2009 Rev. 1. 3 5
BCD Semiconductor Manufacturing Limited
Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2127
Electrical Characteristics
(VIN=2.5V (for 0.8V to 1.8V voltage versions), VIN=VOUT+1V (for 2.5V to 4.75V voltage versions), VIN=6V@VOUT=5.2V, TA=25oC, CIN=1F, COUT=1F, Bold typeface applies over -40oCTA85oC, unless otherwise specified.) Parameter Reference Voltage Output Voltage Input Voltage Maximum Output Current Load Regulation Line Regulation Symbol VREF VOUT VIN IOUT(MAX) VOUT /(IOUT*VOUT) VOUT /(VIN*VOUT) VIN-VOUT=1V, VOUT=0.98xVOUT VIN-VOUT=1V, 1mAIOUT300mA VOUT+0.5VVIN6V IOUT=30mA VOUT=1.0V, IOUT=300mA VOUT=1.2V, IOUT=300mA VOUT=1.5V, IOUT=300mA Dropout Voltage VDROP VOUT=1.8V, IOUT=300mA VOUT=2.5V, 2.8V, 3.0V, 3.3V, 4.2V, IOUT=300mA VOUT=4.75V and 5.2V, IOUT=300mA VIN=VOUT+1V, IOUT=0mA VIN=VOUT+1V, VSHUTDOWN in off mode f=100Hz AP2127-1.0V to 4.2V, Ripple 1Vp-p f=1kHz VIN=VOUT+1V f=10kHz AP2127-4.75V and f=100Hz 5.2V, Ripple f=1kHz 0.5Vp-p VIN=VOUT+1V f=10kHz IOUT=30mA, -40oCTA85oC VOUT=0V 1400 1200 900 600 170 140 60 0.1 68 68 54 63 63 45 Conditions VIN=VOUT+1V 1mAIOUT300mA VIN=VOUT+1V 1mAIOUT300mA Min 0.784 98%x VOUT 2.5 300 400 0.6 0.06 1500 1300 1000 700 300 300 90 1.0 A A dB dB dB dB dB dB ppm/oC mA mV Typ 0.8 Max 0.816 102%x VOUT 6 Unit V V V mA %/A %/V
Quiescent Current Standby Current
IQ ISTD
Power Supply Rejection Ratio
PSRR
Output Voltage Temperature Coefficient Short Current Limit
(VOUT/VOUT) /T ISHORT
100
50
Oct. 2009 Rev. 1.3 6
BCD Semiconductor Manufacturing Limited
Data Sheet Preliminary Datasheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2127
Electrical Characteristics (Continued)
(VIN=2.5V (for 0.8V to 1.8V voltage versions), VIN=VOUT+1V (for 2.5V to 4.75V voltage versions), VIN=6V@VOUT=5.2V, TA=25oC, CIN=1F, COUT=1F, Bold typeface applies over -40oCTA85oC, unless otherwise specified.) Parameter Soft Start Time RMS Output Noise Shutdown "High" Voltage Shutdown "Low" Voltage VOUT Discharge MOSFET RDS(ON) Shutdown Pull Down Resistance Thermal Shutdown Thermal Shutdown Hysteresis Thermal Resistance JC SOT-23-5 Symbol tSS VNOISE TA=25 C, 10Hz f100kHz, VOUT=0.8V Shutdown input voltage "High" Shutdown input voltage "Low" Shutdown input voltage "Low" 1.5 0 60 3 165 30 150
o o
Conditions
Min
Typ 50 60
Max
Unit s Vrms
6 0.4
V V M
o o
C C
C/W
Oct. 2009 Rev. 1. 3 7
BCD Semiconductor Manufacturing Limited
Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2127
Typical Performance Characteristics
1.010 1.009 1.008 1.007
IOUT=10mA IOUT=150mA IOUT=300mA VIN=2.5V
Output Voltage (V)
3.340 3.338 3.336 3.334 3.332 3.330 3.328 3.326 3.324
IOUT=10mA IOUT=150mA IOUT=300mA VIN=4.3V VOUT=3.3V
Output Voltage (V)
1.006 1.005 1.004 1.003 1.002 1.001 1.000 -40
VOUT=1.0V
-20
0
20
40
60
o
80
100
120
-40
-20
0
20
40
60
o
80
100
120
Case Temperature ( C)
Case Temperature ( C)
Figure 5. Output Voltage vs. Case Temperature
Figure 6. Output Voltage vs. Case Temperature
5.275 5.270 5.265 5.260
IOUT=10mA IOUT=150mA IOUT=300mA
Output Voltage (V)
1.0
Output Voltage (V)
5.255 5.250 5.245 5.240 5.235 5.230 5.225 -40
VIN=6V, VOUT=5.2V
0.8
0.6
0.4
0.2
IOUT=0 IOUT=300mA TC=25 C VOUT=1.0V
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
o
0.0
-20
0
20
40
60
o
80
100
120
0.0
Case Temperature ( C)
Input Voltage (V)
Figure 7. Output Voltage vs. Case Temperature
Figure 8. Output Voltage vs. Input Voltage
Oct. 2009 Rev. 1.3 8
BCD Semiconductor Manufacturing Limited
Data Sheet Preliminary Datasheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2127
Typical Performance Characteristics (Continued)
6.0
3.5 3.0 2.5
5.5 5.0 4.5
IOUT=0 IOUT=300mA TC=25 C, VOUT=5.2V
o
Output Voltage (V)
Output Voltage (V)
IOUT=0 IOUT=300mA TC=25 C, VOUT=3.3V
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
o
4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0 1 2 3 4 5 6
2.0 1.5 1.0 0.5 0.0 0.0
Input Voltage (V)
Input Voltage (V)
Figure 9. Output Voltage vs. Input Voltage
Figure 10. Output Voltage vs. Input Voltage
1.0
3.5 3.0
0.8
Output Voltage (V)
0.6
Output Voltage (V)
2.5 2.0 1.5 1.0 0.5
0.4
TC=-40 C TC=25 C
o o
o
0.2
TC=-40 C TC=25 C TC=85 C VIN=4.3V, VOUT=3.3V
o o
o
TC=85 C VIN=2.5V VOUT=1.0V
0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50
0.0 0.00
0.0 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 0.55 0.60
Output Current (A)
Output Current (A)
Figure 11. Output Voltage vs. Output Current
Figure 12. Output Voltage vs. Output Current
Oct. 2009 Rev. 1. 3 9
BCD Semiconductor Manufacturing Limited
Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2127
Typical Performance Characteristics (Continued)
6
3.5
5
3.0 2.5 2.0 1.5 1.0 0.5
Output Voltage (V)
Output Voltage (V)
4
3
VIN=3.8V VIN=4.3V VIN=6V TC=25 C, VOUT=3.3V
o
2
TC=-40 C TC=25 C TC=85 C VIN=6V, VOUT=5.2V
o o
o
1
0.0 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 0.55 0.60
0 0.0
0.1
0.2
0.3
0.4
0.5
Output Current (A)
Output Current (A)
Figure 13. Output Voltage vs. Output Current
Figure 14. Output Voltage vs. Output Current
80
80
70
70
60
Quiescent Current (A)
50 40 30 20 10 0 -10
o o
Quiescent Current (A)
60 50 40 30 20 10 0
TC=-40 C TC=25 C TC=85 C IOUT=0 VOUT=1.0V
1 2 3 4 5 6
o
TC=-40 C TC=25 C TC=85 C IOUT=0, VOUT=3.3V
0 1 2 3 4 5 6
o o
o
Input Voltage (V)
Input Voltage (V)
Figure 15. Quiescent Current vs. Input Voltage
Figure 16. Quiescent Current vs. Input Voltage
Oct. 2009 Rev. 1.3 10
BCD Semiconductor Manufacturing Limited
Data Sheet Preliminary Datasheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2127
Typical Performance Characteristics (Continued)
120 80 70 110
TC=-40 C TC=25 C TC=85 C VIN=2.5V VOUT=1.0V
90
o o
o
Quiescent Current (A)
50 40 30 20 10 0
Quiescent Current (A)
6
60
100
TC=-40 C TC=25 C TC=85 C IOUT=0, VOUT=5.2V
0 1 2 3 4 5
o o
o
80
70
60 0.00 0.05 0.10 0.15 0.20 0.25 0.30
Input Voltage (V)
Output Current (A)
Figure 17. Quiescent Current vs. Input Voltage
Figure 18. Quiescent Current vs. Output Current
115 110 105
TC=-40 C TC=25 C TC=85 C VIN=4.3V, VOUT=3.3V Quiescent Current (A)
o o
o
110 105 100 95 90 85 80 75 70 0.00
TC=-40 C TC=25 C TC=85 C VIN=6V, VOUT=5.2V
o o
o
Quiescent Current (A)
100 95 90 85 80 75 70 65 0.00
0.05
0.10
0.15
0.20
0.25
0.30
0.05
0.10
0.15
0.20
0.25
0.30
Output Current (A)
Output Current (A)
Figure 19. Quiescent Current vs. Output Current
Figure 20. Quiescent Current vs. Output Current
Oct. 2009 Rev. 1. 3 11
BCD Semiconductor Manufacturing Limited
Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2127
Typical Performance Characteristics (Continued)
64
VIN=2.5V
62
73
IOUT=0 VOUT=1.0V
72
Quiescent Current (A)
Quiescent Current (A)
60
71
58
70
56
69
54
68
IOUT=0
52 -40 -20 0 20 40 60
o
67 80 100 120 -40
VIN=4.3V, VOUT=3.3V
-20 0 20 40 60
o
80
100
120
Case Temperature ( C)
Case Temperature ( C)
Figure 21. Quiescent Current vs. Case Temperature
Figure 22. Quiescent Current vs. Case Temperature
80 79 78 77
0.26
IOUT=0 VIN=6V,VOUT=5.2V
0.24 0.22 0.20
TC=-40 C TC=25 C TC=85 C VOUT=3.3V
o o
o
Quiescent Current (A)
Dropout Voltage (V)
-20 0 20 40 60
o
76 75 74 73 72 71 70 69 68 -40 80 100 120
0.18 0.16 0.14 0.12 0.10 0.08 0.06 0.04 0.02 0.00 0.00
0.05
0.10
0.15
0.20
0.25
0.30
Case Temperature ( C)
Output Current (A)
Figure 23. Quiescent Current vs. Case Temperature
Figure 24. Dropout Voltage vs. Output Current
Oct. 2009 Rev. 1.3 12
BCD Semiconductor Manufacturing Limited
Data Sheet Preliminary Datasheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2127
Typical Performance Characteristics (Continued)
0.18 0.16 0.14
0.24
TC=-40 C TC=25 C TC=85 C Dropout Voltage (V) VOUT=5.2V
o o
o
0.22 0.20 0.18 0.16 0.14 0.12 0.10 0.08 0.06 0.04
Dropout Voltage (V)
0.12 0.10 0.08 0.06 0.04 0.02 0.00 0.00
IOUT=10mA IOUT=150mA IOUT=300mA VOUT=3.3V
-40 -20 0 20 40
o
0.02 0.05 0.10 0.15 0.20 0.25 0.30 0.00
60
80
100
Output Current (A)
Case Temperature ( C)
Figure 25. Dropout Voltage vs. Output Current
Figure 26. Dropout Voltage vs. Case Temperature
0.18 0.16 0.14
2.0 1.8 1.6
VOUT=1.0V No heatsink
IOUT=150mA IOUT=300mA VOUT=5.2V
Power Dissipation (W)
Dropout Voltage (V)
0.12 0.10 0.08 0.06 0.04 0.02 0.00 -40
IOUT=10mA
1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -40 -20 0 20 40 60
o
-20
0
20
40
o
60
80
80
100
120
Case Temperature ( C)
Case Temperature( C)
Figure 27. Dropout Voltage vs. Case Temperature
Figure 28. Power Dissipation vs. Case Temperature
Oct. 2009 Rev. 1. 3 13
BCD Semiconductor Manufacturing Limited
Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2127
Typical Performance Characteristics (Continued)
VIN 500mV/div
IOUT 200mA/div
VOUT 50mV/div
VOUT 50mV/div
Figure 29. Line Transient (Condition: CIN=COUT=1F, IOUT=10mA, VIN=2.5V to 3.3V, VOUT=1V)
Figure 30. Load Transient (Condition: CIN=COUT=1F,Sew Rate=20mA/s, VIN=2.5V, VOUT=1V, IOUT=10mA to 300mA)
IOUT 200mA/div
IOUT 200mA/div
VOUT 50mV/div
VOUT 50mV/div
Figure 31. Load Transient (Condition: CIN=COUT=1F, IOUT=10mA to 300mA, VIN=4.3V, VOUT=3.3V)
Figure 32. Load Transient (Condition: CIN=COUT=1F,Sew Rate=20mA/s, VIN=6V, VOUT=5.2V, IOUT=10mA to 300mA)
Oct. 2009 Rev. 1.3 14
BCD Semiconductor Manufacturing Limited
Data Sheet Preliminary Datasheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2127
Typical Performance Characteristics (Continued)
90 80 70 60
IOUT=10mA IOUT=300mA VOUT=1V,Ripple=1VPP
70
60
50
PSRR (dB)
PSRR (dB)
50 40 30 20 10
40
30
20
IOUT=10mA IOUT=300mA VOUT=3.3V, Ripple=1VPP
100 1k 10k 100k
10 0 100 1000 10000 100000
Frequency (Hz)
Frequency (Hz)
Figure 33. PSSR vs. Frequency (Conditions: CIN=COUT=1F, VIN=2.5V, VOUT=1V Ripple=1VPP)
Figure 34. PSSR vs. Frequency (Conditions: CIN=COUT=1F, VIN=4.3V, VOUT=3.3V Ripple=1VPP)
70
60
50
PSRR (dB)
40
30
IOUT=10mA
20
IOUT=300mA VOUT=5.2V, Ripple=0.5VPP
10
100
1k
10k
100k
Frequency (Hz)
Figure 35. PSSR vs. Frequency (Conditions: CIN=COUT=1F, VIN=6V, VOUT=5.2V Ripple=0.5VPP)
Oct. 2009 Rev. 1. 3 15
BCD Semiconductor Manufacturing Limited
Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2127
Typical Application
VIN VIN VOUT
VOUT
AP2127
Shutdown GND ADJ
R1 COUT 1F
R2 CIN 1F
VOUT=0.8*(1+R1/R2) V
VIN
VOUT VIN VOUT
AP2127
Shutdown
CIN 1F
COUT 1F
GND
For 1.0V to5.2V fixed voltage versions Figure 36. Typical Application of AP2127
Oct. 2009 Rev. 1.3 16
BCD Semiconductor Manufacturing Limited
Data Sheet Preliminary Datasheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
Mechanical Dimensions SOT-23-5
2.820(0.111) 3.020(0.119)
AP2127
Unit: mm(inch)
0.100(0.004) 0.200(0.008)
2.950(0.116)
2.650(0.104)
1.500(0.059) 1.700(0.067)
0.200(0.008)
0.700(0.028) REF
0.950(0.037) TYP
0.300(0.012) 0.400(0.016) 1.800(0.071) 2.000(0.079)
0.300(0.012) 0.600(0.024)
0 8
1.450(0.057)
MAX
0.000(0.000) 0.100(0.004)
0.900(0.035) 1.300(0.051)
Oct. 2009 Rev. 1. 3 17
BCD Semiconductor Manufacturing Limited
BCD Semiconductor Manufacturing Limited
http://www.bcdsemi.com
IMPORTANT NOTICE IMPORTANT NOTICE BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifiBCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifications herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or other rights nor the rights of others. other rights nor the rights of others.
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